Selfassembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation

Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown by solid-source molecular beam epitaxy. The Ge quantum dots are vertically correlated and have different average sizes and dot morphologies. The GeGe optical phonon frequency was mainly caused by strain relaxation effects. Experimentally observed GeGe optical phonon modes were compared with calcu...

Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots QDs on In0.524Al0.476As. InAs QDs both buried in, and on top of, In0.524Al0.476As were analyzed using photoluminescence PL and atomic force microscopy. InAs QD morphology and peak PL emission wavelength bo...

Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors

Temperature stabilized 1.55 mm photoluminescence in InAs quantum dots grown on InAlGaAsÕInP

We report on temperature stabilized photoluminescence centered around 1.55 mm in InAs quantum dots grown by molecular beam epitaxy on InP substrate using InAlGaAs as the matrix layer. The photoluminescence emission peak wavelength of quantum dot samples with 5.5 monolayers of InAs deposition has a near zero shift between 300 and 77 K measurements. Decreasing the deposited InAs layer thickness o...

Submonolayer sensitivity of InSb on InP determined by friction-force microscopy

Using molecular-beam-epitaxy-grown InAs and InSb on InP~001! surfaces, we show that the friction-force microscope is sensitive to monolayer coverage. Those surfaces are characterized by three-dimensional islands separated by flat regions. For a constant load, the frictional forces measured on the InAs island and on the substrate are the same. This is due to the formation of a two-dimensional we...